Atomic-Resolution Investigation of Irradiation-Induced Defects in Silicon Carbide

Silicon carbide (SiC) possesses excellent radiation tolerance, thus, SiC and its composites are promising materials for current and future nuclear systems [1]. However, the atomistic processes that underlie the irradiation response are not sufficiently understood, due largely to the limited spatial resolution of conventional analytical tools. Comparing aberration-corrected scanning transmission electron microscopy (AC-STEM) images with STEM image simulations of candidate defect structures is a method for analyzing individual defects in unprecedented detail. Conventional TEM methods can identify defects, such as dislocation loops and black dot damage (Figure 1; 10 dpa neutrons at 800°C), but cannot provide insight regarding the exact atomistic details of the defects present.